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 TLP558
TOSHIBA Photocoupler GaAAs IRed & Photo IC
TLP558
Isolated Bus Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Transistor Inverter
The TOSHIBA TLP558 consisits of a GaAAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8-lead DIP package. The detector has a three state output stage that provides source drive and sink drive, and built-in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / s. TLP558 is inverter logic type. For buffer logic type, TLP555 is in line-up. Unit in mm
l Input current: IF=1.6mA(max.) l Power supply voltage: VCC=4.5~20V l Switching speed: tpHL, tpLH=400ns(max.) l Common mode transient immunity: 1000V / s(min.) l Guaranteed performance over temperature: -25~85C l Isolation voltage: 2500Vrms(min.) l UL recognized: UL1577, file No. E67349
TOSHIBA Weight: 0.54 g
11-10C4
Pin Configuration(top view)
1 2 3 4 GND Shield VCC 8 1 : NC 2 : Anode 7 3 : Cathode 4 : NC 6 5 : GND 6 : VO(Output) 5 7 : VE(Enable) 8 : VCC
Truth Table(positive logic)
Input H L H L Enable H H L L Output L H Z Z
Schematic
IE ICC 7 8 VE VCC
A 0.1F bypass capacitor must be connected between pins 8 and 5 (see Note 9).
+ VF 2 3
IF
IO 6 VO
Shield
GND 5
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TLP558
Maximum Ratings
(no derating required up to 85C unless otherwise noted)
Charactersitic Forward current LED Peak transient forward current Reverse voltage Output current Peak output current Detector Output voltage Supply voltage Three state enabel voltage Output power dissipation Total package power dissipation Operating temperature range Storage temperature range Lead solder temperature(10s)** Isolation voltage(AC, 1min., R.H. 60%, Ta=25C) (Note 5) (Note 3) (Note 4) (Note 2) (Note 1) Symbol IF IFPT VR IO IOP VO VCC VE PO PT Topr Tstg Tsol BVS Rating 10 1 5 40 / -25 80 / -50 -0.5~20 -0.5~20 -0.5~20 100 200 -40~85 -55~125 260 2500 Unit mA A V mA mA V V V mW mW C C C Vrms
(Note 1) Pulse width 1s, 300pps. (Note 2) Pulse width 5s, duty ratio 0.025. (Note 3) Derate 1.8mW / C above 70C ambient temperature. (Note 4) Derate 3.6mW / C above 70C ambient temperature. (Note 5) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. **1.6mm below seating plane.
Recommended Operating Conditions
Characteristic Input current, on Input voltage, off Supply voltage Enable voltage high Enable voltage low Fan out(TTL load) Operating temperature Symbol IF(ON) VF(OFF) VCC VEH VEL N Topr Min. 2* 0 4.5 2.0 0 -25 Typ. Max. 5 0.8 20 20 0.8 4 85 Unit mA V V V V C
*2mA condition permits at least 20% CTR degradation guardband. Initial switching threshold is 1.6mA or less.
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Electrical Characteristics(unless otherwise specified, Ta = -25~85C, VCC = 4.5~20V)
Characteristic Input forward voltage Temperature coefficient of forward voltage Input reverse current Input capacitance Output leakage current (VO > VCC) Logic low output voltage Logic high output voltage Logic low enable current Symbol VF VF / Ta IR CT IOHH VOL VOH IEL Test Condition IF=5mA, Ta=25C IF=5mA VR=5V, Ta=25C VF=0, f=1MHz, Ta=25C VF=0, VCC=4.5V VO=VE=5.5V VO=VE=20V Min. 2.4 IF=5mA VCC=VE=5.5V VCC=VE=20V VCC=VE=5.5V VCC=VE=20V VO=0.4V VO=2.4V IOZH IF=5mA VE=0.8V IF=5mA VE=2V VF=0V, VO=GND VE=2V VE=2V, IO=6.4mA VO < 0.4V VE=2V, IO=-2.6mA VO > 2.4V VO=5.5V VO=20V Logic low short circuit output current Logic high short circuit output current Input current logic low output Input voltage logic high output (Note 6) IOSL VO=VCC=5.5V VO=VCC=20V VCC=5.5V VCC=20V 2.0 25 40 -10 -25 0.8 Typ.* 1.55 -2.0 45 0.01 0.4 3.3 -0.13 0.01 4.0 4.6 4.2 4.7 1 55 80 -25 -60 0.4 Max. 1.7 10 100 500 0.5 -0.32 20 100 250 0.8 6.0 7.5 6.0 7.5 -20 20 100 500 1.6 mA A V V mA A Unit V mV / C A pF A V V mA
IOL=6.4mA, IF=1.6mA VE=2V IOH=-2.6mA, VF=0.8V VE=2V VE=0.4V VE=2.7V
Logic high enable current
IEH
VE=5.5V VE=20V
Logic low enable voltage Logic high enable voltage Logic low supply current
VEL VEH ICCL
Logic high supply current
ICCH IOZL
VF=0V VF=0V VE=0.8V
mA
High impedance state output current
(Note 6)
IOSH IFL VFH
mA mA V
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TLP558
Electrical Characteristics(unless otherwise specified, Ta = -25~85C, VCC = 4.5~20V)
Characteristic Input current hysteresis Resistance (input-output) Capacitance(input-output) Symbol IHYS RS CS Test Condition VCC=VE=5V VS=500V, R.H. 60% Ta=25C VS=0, f=1MHz, Ta=25C (Note 5) (Note 5) Min. 5x10
10
Typ.* 0.05 10
14
Max.
Unit mA pF
1.0
*All typical values are at Ta=25C, VCC=5V, IF(ON)=3mA unless otherwise specified.
Switching Characteristics(unless otherwise specified, VCC = 4.5~20V, Ta = 25C)
Characteristic Propagation delay time to logic high output Propagation delay time to logic low output Output rise time (10-90%) Output fall time (90-10%) Output enable time to logic high Output enable time to logic low Output disable time from logic high Output disable time from logic low Common mode transient immunity at logic high output Common mode transient immunity at logic low output Symbol tpLH tpHL tr tf tpZH tpZL 2 tpHZ tpLZ CMH 3 CML IF=1.6mA, VCM=50V VO(Max.)=0.8V -1000 V / s VE=3 0V VE=3 0V IF=0mA, VCM=50V VO(Min.)=2V ns ns 1 Test Circuit Test Condition IF=3 0mA IF=0 3mA IF=3 0mA, VCC=5V IF=0 3mA, VCC=5V VE=0 3V VE=0 3V Min. Typ.* 250 270 35 20 Max. 400 400 75 75 Unit ns ns ns ns ns ns
(Note 7) (Note 7)
1000
V / s
(Note 8)
(Note 8)
* All typical values are at Ta=25C, VCC=5V
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(Note 6) Duration of output short circuit time should not exceed 10ms. (Note 7) The tpLH propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.3V point on the leading edge of the output pulse. The tpHL propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.3V point on the trailing edge of the output pulse. (Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO > 0.8V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic state (VO > 2.0). (Note 9) A ceramic capacitor (0.1F) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1cm.
Test Circuit 1: tpLH, tpHL, tr And tf
Pulse generation tr = tf = 5ns VO = 5V VCC VO Monitor 5V
Input IF tpHL 90% 10% tf
IF(ON) 50% tpLH 1.3V tr VOH VOL 0mA
Output VO
2 IF Monitor 100 3 4 GND
7 6 5
0.1F
IF
1
VCC 8
620 D1 5k CL
D1D4 : 1S1588 D2 D3 D4
CL is approximately 15pF which includes probe and stray wiring capacitance.
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Test Circuit 2: tpHZ, tpZH, tpLZ And tpZL
Pulse generator ZO=50 tr = tf = 5ns 0V S1 and S2 Closed VOL VOH 1.5V S1 and S2 Closed 1 IF 2 3 4 GND VCC 8 7 6 5k S2 0.1F VO Monitor 5 0.1F VE VCC VO 620 D1 D1D4 : 1S1588 D2 D3 D4 CL VCC IF A VFF 1 2 B VO (MIN.)* Switch at A : IF=0mA VOL Switch at B : IF=1.6mA * Note 8 CMH= 45(V) tf(s) 45(V) tf(s) VO(MAX.)* + 3 4 GND VCM - Pulse generator ZO =50 , CML= VCC 8 7 6 5 S1 Monitor 5V
Input VE tpZL Output VO IF = IF (ON) S1 Closed S2 Open 1.3V tpZH 1.3V 0V tpHZ
3V 1.3V tpLZ 0.5V
Output VO IF = 0mA
S1 Open S2 Closed
0.5V
CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 3: Common Mode Transient Immunity
VCM
10%
90% tr tf
50V 0V
VOH Output VOH
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RESTRICTIONS ON PRODUCT USE
*
000707EBC
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.
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